Process for fabricating a semiconductor device

专利名称：Process for fabricating a semiconductor

device

发明人：Komai, Naoki,Segawa, Yuji,Nogami, Takeshi申请号：EP01103238.0申请日：20010212公开号：EP1126518A3公开日：20030122

专利附图：

摘要：A process for fabricating a semiconductor device, which comprises forming, on ametal wiring (21) formed from copper or a copper alloy, a barrier film (31) which functionsas a diffusion-preventing film for the metal wiring by an electroless plating method,

wherein a catalytic metal film (26) which serves as a catalyst in the electroless platingmethod is selectively formed on the metal wiring by a displacement plating methodusing a displacement plating solution at a temperature in the range of 30°C or more andlower than a boiling point thereof, and the barrier film (31) is selectively formed on thecatalytic metal film (26) by the electroless plating method. It is an object of the presentinvention, to selectively and uniformly carry out the catalyst activation to the surface ofthe metal wiring made of copper or a copper alloy by using palladium so as to improveplating property of the electroless plating method using a hypophosphite as a reducingagent and the reliability of the wiring.

申请人：SONY CORPORATION

地址：7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo JP

国籍：JP

代理机构：Müller - Hoffmann & Partner

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