Charge pump for use in a semiconductor memory

专利名称：Charge pump for use in a semiconductor

memory

发明人：Hyung-Sik You,Hyun-Seok Lee申请号：US11210460申请日：20050823公开号：US07333373B2公开日：20080219

专利附图：

摘要：In an embodiment, an improved charge pump circuit is provided to control athreshold voltage increase of a charge transmission transistor during a charge transferperiod, and to prevent a latch-up generation during a charge non-transfer period. A

charge transmission transistor transmits the voltage of a boosting node to a high voltagegeneration terminal in response to the voltage of a control node. In a bulk connectionswitch, during the charge transfer period the high voltage generation terminal isconnected to the bulk of the charge transmission transistor and during the charge non-transfer period the bulk is connected to the low voltage, being lower than that of thevoltage appearing at the boosting node of the charge transmission transistor or the highvoltage generation terminal. Charge transmission efficiency and pumping operationreliability are improved, increasing the reliability of data access operations in asemiconductor memory device, for example.

申请人：Hyung-Sik You,Hyun-Seok Lee

地址：Gyeonggi-do KR,Seoul KR

国籍：KR,KR

代理机构：Marger Johnson & McCollom, P.C.

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