Charge pump and semiconductor memory device

专利名称：Charge pump and semiconductor memory

device

发明人：中村 直樹,安田 貴憲申请号：JP2018174927申请日：20180919公开号：JP2020048326A公开日：20200326

专利附图：

摘要：Problem to be solved: to provide a charge pump capable of suppressingoccurrence of failure in the diode portion of the final stage. A multiple stage diodesection andOne end of each diode is connected to the input end of the diodeThe otherend is a capacitor to which one of the first and second clocks complementary to eachother is applied andBetween the input end of the diode portion in the final stage and theapplied end of the first clockConnected to the capacitorA first diode portion having an

input end side of the first clock as an input side andIncludeCharge pump.Diagram

申请人：ローム株式会社

地址：京都府京都市右京区西院溝崎町２１番地

国籍：JP

代理人：特許業務法人 佐野特許事務所

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