专利名称:Silica glass crucible and its manufacturing
method
发明人:岸 弘史,長谷部 幸太,安部 貴裕,藤原 秀樹,北原 江
梨子
申请号:JP2019516369申请日:20180402
公开号:JPWO2018203454A1公开日:20191121
专利附图:
摘要:Problem to be solved: to provide a quartz glass crucible capable ofwithstanding a very long single crystal pulling step such as multi pulling, and amanufacturing method thereof. Solution: the quartz glass crucible 1 is formed of acrucible body 10 having a bottomed cylindrical shape made of quartz glass and a cruciblebody 10 so as to form a crystallization accelerating layer in the vicinity of the surface ofthe crucible body 10 by heating during the pulling up process of the silicon single crystal
by the chalkalski method Coating films 13A and 13b containing crystallizationaccelerating agents formed on the surface are provided. Diagram
申请人:株式会社SUMCO
地址:東京都港区芝浦一丁目2番1号
国籍:JP
代理人:鷲頭 光宏,緒方 和文
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