专利名称：Method for Forming Projections and
Depressions, Sealing Structure, and Light-Emitting Device
发明人：Yusuke Nishido申请号：US15211444申请日：20160715
公开号：US20160322608A1公开日：20161103
专利附图：
摘要：A novel method for forming projections and depressions is provided. A novelsealing structure is provided. A novel light-emitting device is provided. A first step of
forming a film containing at least two kinds of metals having different etching rates overa surface; a second step of heating the film so that the metal having a lower etching ratesegregates; a third step of selectively etching the metal having a higher etching rate; anda fourth step of selectively etching the surface using a residue containing the metalhaving a lower etching rate are included.
申请人：Semiconductor Energy Laboratory Co., Ltd.
地址：Kanagawa-ken JP
国籍：JP
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