A HIGH VOLTAGE DEVICE WITH COMPOSITE STRUCTURE AND

专利名称：A HIGH VOLTAGE DEVICE WITH COMPOSITE

STRUCTURE AND A STARTING CIRCUIT

发明人：Zhaohua LI申请号：US14357492申请日：20130809

公开号：US20150311280A1公开日：20151029

专利附图：

摘要：A high voltage device with composite structure comprises a high voltage powerMOS transistor HVNMOS and a JFET. The high voltage power MOS transistor HVNMOScomprises a drain, a source, a gate and a substrate, and a P-type well region Pwell as a

conducting channel which is arranged between the source and the drain. The JFETcomprises the drain, the source, the gate and the substrate, and an N-type well regionNwell as a conducting channel which is arranged between the source and the drain. Thehigh voltage power MOS transistor HVNMOS and the JFET share the same drain, and thedrain is processed by using N-type double diffusion process. The embodiment of thepresent invention further presents a starting circuit using the high voltage device withcomposite structure.

申请人：SHENZHEN SUNMOON MICROELECTRONICS CO., LTD.

地址：Shenzhen, Guangdong CN

国籍：CN

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