Semiconductor device with copper wiring connected

专利名称：Semiconductor device with copper wiring

connected to storage capacitor

发明人：Yukihiro Kumagai,Hideo Miura,Hiroyuki

Ohta,Tomio Iwasaki,Isamu Asano

申请号：US09525029申请日：20000314公开号：US06521932B1公开日：20030218

专利附图：

摘要：It is an object of the present invention to provide a high-reliability

semiconductor device having a storage capacitor and wiring using copper for a main

conductive film. Under the above object, the present invention provides a semiconductordevice comprising: a semiconductor substrate; a storage capacitor formed on the mainsurface side of the semiconductor substrate and being a first electrode and a secondelectrode arranged so as to put a capacitor insulation film; a wiring conductor formed onthe main surface side of the semiconductor substrate and including the copper (Cu)element; and a first film formed on the surface of the wiring conductor; wherein amaterial configuring the first film and a material configuring the first electrode and/orthe second electrode include the same element.

申请人：HITACHI, LTD.

代理机构：Antonelli, Terry, Stout & Kraus, LLP

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