Method of producing an integrated circuit with a c

专利名称：Method of producing an integrated circuit

with a carbon nanotube

发明人：Rudiger Schlaf申请号：US10313886申请日：20021206公开号：US06835613B2公开日：20041228

专利附图：

摘要：A method of producing an integrated circuit with a carbon nanotube is

disclosed. The integrated circuit includes a source, a drain, and a gate, and the source andthe drain are positioned on the gate. A catalytic material is deposited onto the source.

The catalytic material is then subjected to chemical vapor deposition. This initiates growthof the carbon nanotube such that the carbon nanotube extends from the source. Next,the carbon nanotube is bent toward the integrated circuit such that the carbon nanotubeextends between the source and the drain to render the circuit operable.

申请人：UNIVERSITY OF SOUTH FLORIDA

代理机构：Howard & Howard

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