-------High Speed SwitchingLow On-Resistance
No Secondary BreakdownLow Driving PowerHigh Voltage
VGS = ± 30V GuaranteeAvalanche Proof
2SK1940-01
N-channel MOS-FET
>Applications
----Switching RegulatorsUPS
DC-DC converters
General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating UnitDrain-Source-Voltage VDS 600 VDrain-Gate-Voltage (RGS=20KΩ) VDGR 600 VContinous Drain Current ID 12 APulsed Drain Current ID(puls) 48 AGate-Source-Voltage VGS ±30 VMax. Power Dissipation PD 125 WOperating and Storage Temperature Range Tch 150 °CTstg -55 ~ +150 °C-Electrical Characteristics (TC=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. UnitDrain-Source Breakdown-Voltage V(BR)DSS ID=1mA VGS=0V 600 VGate Threshhold Voltage VGS(th) ID=1mA VDS=VGS 2,5 3,0 3,5 VZero Gate Voltage Drain Current IDSS VDS=600V Tch=25°C 10 500 µAVGS=0V Tch=125°C 0,2 1,0 mAGate Source Leakage Current IGSS VGS=±30V VDS=0V 10 100 nADrain Source On-State Resistance RDS(on) ID=6A VGS=10V 0,55 0,75 ΩForward Transconductance gfs ID=6A VDS=25V 6 12 SInput Capacitance Ciss VDS=25V 2500 3800 pFOutput Capacitance Coss VGS=0V 220 330 pFReverse Transfer Capacitance Crss f=1MHz 50 75 pFTurn-On-Time ton (ton=td(on)+tr) td(on)VCC=300V 30 45 nstr ID=6A 60 90 nsTurn-Off-Time toff (ton=td(off)+tf) td(off)VGS=10V 140 210 nstf RGS=10 Ω 80 120 nsAvalanche Capability IAV L = 100µH Tch=25°C 12 AContinous Reverse Drain Current IDR 12 APulsed Reverse Drain Current IDRM 48 ADiode Forward On-Voltage VSD IF=2xIDR VGS=0V Tch=25°C 1,05 1,58 VReverse Recovery Time trr IF=IDR VGS=0V 450 nsReverse Recovery Charge Qrr -dIF/dt=100A/µs Tch=25°C 3 µC- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. UnitThermal Resistance Rth(ch-a) channel to air 35 °C/WRth(ch-c) channel to case 1,25 °C/WCollmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-15 - FAX 972-233-0481 - http://www.collmer.com元器件交易网www.cecb2b.comN-channel MOS-FET
600V
0,75Ω
12A125W
FAP-IIA Series
2SK1940-01
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
> Characteristics
Typical Output Characteristics
↑
ID [A]1
↑
RDS(ON) [Ω]2↑
ID [A]3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. IDTypical Forward Transconductance vs. IDGate Threshold Voltage vs. Tch
↑
RDS(ON) [Ω]44
↑
gfs [S]5↑
VGS(th) [V]6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitance vs. VDSTypical Input ChargeForward Characteristics of Reverse Diode
↑
C [nF]7↑
VDS [V]8↑
VGS [V]↑
IF [A]9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Allowable Power Dissipation vs. TCSafe operation area
↑
Zth(ch-c) [K/W]Transient Thermal impedance
↑
PD [W]10↑
ID [A]1211
Tc [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!
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