2SK1940-01资料

-------High Speed SwitchingLow On-Resistance

No Secondary BreakdownLow Driving PowerHigh Voltage

VGS = ± 30V GuaranteeAvalanche Proof

2SK1940-01

N-channel MOS-FET

>Applications

----Switching RegulatorsUPS

DC-DC converters

General Purpose Power Amplifier

>Maximum Ratings and Characteristics > Equivalent Circuit

-Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item Symbol Rating UnitDrain-Source-Voltage VDS 600 VDrain-Gate-Voltage (RGS=20KΩ) VDGR 600 VContinous Drain Current ID 12 APulsed Drain Current ID(puls) 48 AGate-Source-Voltage VGS ±30 VMax. Power Dissipation PD 125 WOperating and Storage Temperature Range Tch 150 °CTstg -55 ~ +150 °C-Electrical Characteristics (TC=25°C), unless otherwise specified

Item Symbol Test conditions Min. Typ. Max. UnitDrain-Source Breakdown-Voltage V(BR)DSS ID=1mA VGS=0V 600 VGate Threshhold Voltage VGS(th) ID=1mA VDS=VGS 2,5 3,0 3,5 VZero Gate Voltage Drain Current IDSS VDS=600V Tch=25°C 10 500 µAVGS=0V Tch=125°C 0,2 1,0 mAGate Source Leakage Current IGSS VGS=±30V VDS=0V 10 100 nADrain Source On-State Resistance RDS(on) ID=6A VGS=10V 0,55 0,75 ΩForward Transconductance gfs ID=6A VDS=25V 6 12 SInput Capacitance Ciss VDS=25V 2500 3800 pFOutput Capacitance Coss VGS=0V 220 330 pFReverse Transfer Capacitance Crss f=1MHz 50 75 pFTurn-On-Time ton (ton=td(on)+tr) td(on)VCC=300V 30 45 nstr ID=6A 60 90 nsTurn-Off-Time toff (ton=td(off)+tf) td(off)VGS=10V 140 210 nstf RGS=10 Ω 80 120 nsAvalanche Capability IAV L = 100µH Tch=25°C 12 AContinous Reverse Drain Current IDR 12 APulsed Reverse Drain Current IDRM 48 ADiode Forward On-Voltage VSD IF=2xIDR VGS=0V Tch=25°C 1,05 1,58 VReverse Recovery Time trr IF=IDR VGS=0V 450 nsReverse Recovery Charge Qrr -dIF/dt=100A/µs Tch=25°C 3 µC- Thermal Characteristics

Item Symbol Test conditions Min. Typ. Max. UnitThermal Resistance Rth(ch-a) channel to air 35 °C/WRth(ch-c) channel to case 1,25 °C/WCollmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-15 - FAX 972-233-0481 - http://www.collmer.com元器件交易网www.cecb2b.comN-channel MOS-FET

600V

0,75Ω

12A125W

FAP-IIA Series

2SK1940-01

Drain-Source-On-State Resistance vs. Tch

Typical Transfer Characteristics

> Characteristics

Typical Output Characteristics

↑

ID [A]1

↑

RDS(ON) [Ω]2↑

ID [A]3

VDS [V]

→

Tch [°C]

→

VGS [V]

→

Typical Drain-Source-On-State-Resistance vs. IDTypical Forward Transconductance vs. IDGate Threshold Voltage vs. Tch

↑

RDS(ON) [Ω]44

↑

gfs [S]5↑

VGS(th) [V]6

ID [A]

→

ID [A]

→

Tch [°C]

→

Typical Capacitance vs. VDSTypical Input ChargeForward Characteristics of Reverse Diode

↑

C [nF]7↑

VDS [V]8↑

VGS [V]↑

IF [A]9

VDS [V]

→

Qg [nC]

→

VSD [V]

→

Allowable Power Dissipation vs. TCSafe operation area

↑

Zth(ch-c) [K/W]Transient Thermal impedance

↑

PD [W]10↑

ID [A]1211

Tc [°C]

→

VDS [V]

→

t [s]

→

This specification is subject to change without notice!