METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

专利名称：METHOD OF FORMING A SEMICONDUCTOR

STRUCTURE

发明人：Terry Sparks申请号：US13359174申请日：20120126

公开号：US201201262A1公开日：20120524

专利附图：

摘要：A method of forming a semiconductor structure comprises forming a first layerof silicon and then forming a second, silicon germanium, layer adjacent the silicon layer. Athin third layer of silicon is then formed adjacent the second layer. A gate structure isthen formed upon the third layer of silicon using convention Complementary Metal OxideSemiconductor processes. Trenches are then formed into the second layer and thestructure is then exposed to a thermal gaseous chemical etchant, for example heated

hydrochloric acid. The etchant removes the silicon germanium, thereby forming a Silicon-On-Nothing structure. Thereafter, conventional CMOS processing techniques are appliedto complete the structure as a Metal Oxide Semiconductor Field Effect Transistor,including the formation of spacer walls from silicon nitride, the silicon nitride also filling acavity formed beneath the third layer of silicon by removal of the silicon germanium.

申请人：Terry Sparks

地址：Niskayuna NY US

国籍：US

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