Method of forming a semiconductor structure

专利名称：Method of forming a semiconductor

structure

发明人：Doris W. Flatley,Alfred C. Ipri申请号：US06/856278申请日：19860428公开号：US04658495A公开日：19870421

摘要：A method for forming a layer of silicon dioxide over a silicon island on aninsulating surface wherein the layer on top of the island is thinner than on the sidewalls isdisclosed. The silicon island is oxidized and a silicon layer is deposited thereover. A layerof planarizing material is deposited over the silicon layer. The planarizing layer is

anisotropically etched until the surface of the silicon layer overlying the island is exposed.The silicon layer is in turn etched until the surface of the oxide layer overlying the islandis exposed. The remaining planarizing material is removed and the remaining silicon layeris oxidized. The thickness of the gate oxide layer on top of the island may be controlledby again exposing the island surface and reoxidizing to a predetermined thickness. Aconductive polycrystalline silicon electrode is deposited on the oxide-covered island. Thedisclosed method is particularly useful in the formation of MOSFETs.

申请人：RCA CORPORATION

代理人：Birgit E. Morris,R. Hain Swope

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