Scanning electron microscope based parametric test

专利名称：Scanning electron microscope based

parametric testing method and apparatus

发明人：Thomas J. Aton申请号：US07/529062申请日：19900525公开号：US05053699A公开日：19911001

摘要：A scanning electron microscope (SEM) (24), or other irradiating device, is used tocreate a potential in sample areas (39b) of a test structure (39) formed on the surface ofan integrated circuit wafer. A conduction path between the irradiated sample area and acommon area (39a) is detected via an ammeter (40) connected between the sample area(39b) and a voltage source (42). Monitoring circuit (44) produces an output indicative ofthose sample areas (39b) which are electrically coupled to the common area (39a).

申请人：TEXAS INSTRUMENTS INCORPORATED

代理人：James C. Kesterson,James T. Comfort,Melvin Sharp

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