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Scanning electron microscope based parametric test

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专利名称:Scanning electron microscope based

parametric testing method and apparatus

发明人:Thomas J. Aton申请号:US07/529062申请日:19900525公开号:US05053699A公开日:19911001

摘要:A scanning electron microscope (SEM) (24), or other irradiating device, is used tocreate a potential in sample areas (39b) of a test structure (39) formed on the surface ofan integrated circuit wafer. A conduction path between the irradiated sample area and acommon area (39a) is detected via an ammeter (40) connected between the sample area(39b) and a voltage source (42). Monitoring circuit (44) produces an output indicative ofthose sample areas (39b) which are electrically coupled to the common area (39a).

申请人:TEXAS INSTRUMENTS INCORPORATED

代理人:James C. Kesterson,James T. Comfort,Melvin Sharp

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