专利名称：eFuse and method of fabrication发明人：Edward P. Maciejewski,Dustin Kenneth
Slisher,Stefan Zollner
申请号：US13013055申请日：20110125公开号：US08912626B2公开日：20141216
专利附图：
摘要：An improved eFuse and method of fabrication is disclosed. A cavity is formed ina substrate, which results in a polysilicon line having an increased depth in the area of thefuse, while having a reduced depth in areas outside of the fuse. The increased depth
reduces the chance of the polysilicon line entering the fully silicided state. The cavity maybe formed with a wet or dry etch.
申请人：Edward P. Maciejewski,Dustin Kenneth Slisher,Stefan Zollner
地址：Hopewell Junction NY US,Hopewell Junction NY US,Las Cruces NM US
国籍：US,US,US
代理人：Yuanmin Cai,Keivan Razavi
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