专利名称：Methods for forming porous insulator
structures on semiconductor devices
发明人：Warren M. Farnworth,Tongbi Jiang申请号：US10933061申请日：20040901公开号：US07285502B2公开日：20071023
专利附图：
摘要：A method for forming a porous insulative structure on a semiconductor devicestructure includes forming a layer of unconsolidated electrically insulative, or dielectric,material with microcapsules dispersed therethrough on at least a portion of the surfaceof the semiconductor device structure. The microcapsules may be hollow or include aremovable filler. Once the layer has been formed, the unconsolidated material is at leastpartially consolidated. Filler, if any, may be removed from the microcapsules to provide aporous insulative layer or structure. This layer or structure may be configured to supportconductive elements or other features of the semiconductor device.
申请人：Warren M. Farnworth,Tongbi Jiang
地址：Nampa ID US,Boise ID US
国籍：US,US
代理机构：TraskBritt
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