Method of making ferroelectric FET with polycrysta

专利名称：Method of making ferroelectric FET with

polycrystalline crystallographically orientedferroelectric material

发明人：Koji Arita,Carlos A. Paz de Araujo,Larry D.

McMillan,Masamichi Azuma

申请号：US09533204申请日：20000323公开号：US06537830B1公开日：20030325

专利附图：

摘要：A nondestructive read-out, nonvolatile ferroelectric field effect transistor

(“FET”) memory in an integrated circuit, containing a thin film of polycrystallinecrystallographically oriented ferroelectric material. Preferably, the material is

polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axisoriented strontium bismuth tantalate or strontium bismuth tantalum niobate.

申请人：SYMETRIX CORPORATION,MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

代理机构：Patton Boggs LLP

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