Method of measuring and calibrating inclination of

专利名称：Method of measuring and calibrating

inclination of electron beam in electronbeam proximity exposure apparatus, andelectron beam proximity exposureapparatus

发明人：Akira Higuchi申请号：US10152343申请日：20020522公开号：US06624430B2公开日：20030923

专利附图：

摘要：A calibration mask having a plurality of marks previously formed thereon isloaded, and a deflector is used to control deflection of electron beams so that theelectron beams are incident on a mark of the calibration mask. The electron beams,having passed through the mark, impinge on a first Faraday cup having a first mark and ona second Faraday cup having a second mark. Then, positional coordinates on an XY stageare detected when electrical quantities detected by the Faraday cups are largest. Thepositional coordinates on the above mentioned XY stage are detected for each of themarks of the calibration mask. Then, according to the positional coordinates on the XYstage detected in this manner and a difference in height between the marks, theinclination of the electron beams is calculated for the position input to each mark of thecalibration mask. Thus, the inclination of electron beams can be accurately measured.

申请人：LEEPL CORPORATION

代理机构：Nixon Peabody LLP

代理人：David S. Safran

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