Process of forming recessed dielectric regions in

专利名称：Process of forming recessed dielectric

regions in a monocrystalline siliconsubstrate

发明人：Hans B. Pogge申请号：US06/180535申请日：19800822公开号：US04307180A公开日：19811222

摘要：A method of forming surface planarity to a substrate during removal of excessdielectric material when fabricating recessed regions of dielectric material in asemiconductor device wherein a dielectric layer is formed on the surface of the siliconsubstrate, a relatively thick layer of polycrystalline silicon deposited over the SiO.sub.2layer, openings formed through the polycrystalline layer and SiO.sub.2 layer and into thesubstrate to form trenches, vapor depositing a layer of dielectric material over thesurface of the substrate to a depth sufficient to fill the trench, depositing a planarizedlayer over a layer of dielectric material, reactive ion etching the planarizing layer, thedielectric layer, the polycrystalline layer, and selectively removing the remainingpolycrystalline silicon layer to expose the SiO. sub.2 layer.

申请人：INTERNATIONAL BUSINESS MACHINES CORP.

代理人：Wolmar J. Stoffel

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