SN74F1056DR;SN74F1056DRE4;SN74F1056DRG4;SN74F1056D;SN74F1056DE4;中文规格书,Datasheet资料

 SN74F10568-BIT SCHOTTKY BARRIER DIODEBUS-TERMINATION ARRAYSDFS085A – AUGUST 1992 – REVISED JULY 1997DDesigned to Reduce Reflection NoiseDRepetitive Peak Forward Current 300mAD8-Bit Array Structure Suited forBus-Oriented SystemsSC PACKAGE(TOP VIEW)descriptionThis Schottky barrier diode bus-termination arrayis designed to reduce reflection noise on memorybus lines. This device consists of an 8-bithigh-speed Schottky diode array suitable for aclamp to GND.The SN74F1056 is characterized for operationfrom 0°C to 70°C.D01D02D03D04GNDGNDD05D06D07D08123456710D PACKAGE(TOP VIEW)D01D02D03D04D05D06D07D0812345678161514131211109NCGNDGNDGNDGNDGNDGNDNCschematic diagramsSC PackageD011D011D PackageD022D022153144135126117108GNDGNDD03D043GNDD03D04GNDD0575GNDGNDGNDD05D06D07D06D07D0810D08GNDPlease be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.Copyright © 1997, Texas Instruments IncorporatedPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•1http://oneic.com/SDFS085A – AUGUST 1992 – REVISED JULY 1997SN74F10568-BIT SCHOTTKY BARRIER DIODEBUS-TERMINATION ARRAYabsolute maximum ratings over operating free-air temperature range (unless otherwise noted)† . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSteady-state reverse voltage, VR 7 Continuous forward current, IF:Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mATotal through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mARepetitive peak forward current, IFRM (see Note 1):Any D terminal from GND . . . . . . . . . . . . . . . . . . 300 mATotal through all GND terminals . . . . . . . . . . . . . . . 1.2 AContinuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . . . 500 mWOperating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°CStorage temperature range, Tstg –65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . °C to 150°C†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTE 1:These values apply for tw ≤ 100 µs, duty cycle ≤ 20%.electrical characteristics over recommended operating free-air temperature range (unlessotherwise noted)single-diode operation (see Note 2)PARAMETERIRVFVFMCtStatic reverse currentStaticforwardvoltageStatic forward voltagePeak forward voltageTotalcapacitanceTotal capacitanceVR = 7 VIF = 18 mAIF = 50 mAIF = 200 mAVR = 0,VR = 2 V,f = 1 MHzf = 1 MHzTEST CONDITIONSMINTYP‡0.811.2332.53.753MAX211.2UNITµAVVpF‡All typical values are at TA = 25°C.NOTE 2:Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurementof these characteristics.multiple-diode operationPARAMETERTEST CONDITIONSMINTYP‡10MAX50UNITµAIxInternal crosstalk currentTotal GND current = 1.2 A,See Note 3‡All typical values are at TA = 25°C.NOTE 3:Ix is measured under the following conditions with one diode static, all others switching:Switching diodes: tw = 100 µs, duty cycle = 20%Static diode: VR = 5 VThe static diode input current is the internal crosstalk current Ix.switching characteristics, TA = 25°CPARAMETERtrrReverse recovery timeIF = 10 mA,TEST CONDITIONSIRM(REC) = 10 mA,IR(REC) = 1 mA,RL = 100 ΩMINTYP5MAX7UNITnsundershoot characteristicsPARAMETERVUSUndershoot voltageTEST CONDITIONStf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 Ω, ZO = 50 Ω,L = 36-inch coaxMINTYP0.6MAX0.7UNITV2POST OFFICE BOX 655303 DALLAS, TEXAS 75265•http://oneic.com/ SN74F10568-BIT SCHOTTKY BARRIER DIODEBUS-TERMINATION ARRAYSDFS085A – AUGUST 1992 – REVISED JULY 1997APPLICATION INFORMATIONLarge negative transients occurring at the inputs of memory devices (DRAMs, SRAMs, EPROMs, etc.) or on theCLOCK lines of many clocked devices can result in improper operation of the devices. The SN74F1056 diodetermination array helps suppress negative transients caused by transmission-line reflections, crosstalk, andswitching noise.Diode terminations have several advantages when compared to resistor termination schemes. Split resistor orThevenin equivalent termination can cause a substantial increase in power consumption. The use of a single resistorto ground to terminate a line usually results in degradation of the output high level, resulting in reduced noise immunity.Series damping resistors placed on the outputs of the driver reduce negative transients, but they also can increasepropagation delays down the line, as a series resistor reduces the output drive capability of the driving device. Diodeterminations have none of these drawbacks.The operation of the diode arrays in reducing negative transients is explained in the following figures. The diodeconducts current when the voltage reaches a negative value large enough for the diode to turn on. Suppression ofnegative transients is tracked by the current-voltage characteristic curve for that diode. A typical current versusvoltage plot for the SN74F1056 is shown in Figure 1.To illustrate how the diode arrays act to reduce negative transients at the end of a transmission line, the test setupin Figure 2(a) was evaluated. The resulting waveforms with and without the diode are shown in Figure 2(b).The maximum effectiveness of the diode arrays in suppressing negative transients occurs when the diode arrays areplaced at the end of a line and/or the end of a long stub branching off a main transmission line. The diodes also canbe used to reduce the negative transients that occur due to discontinuities in the middle of a line. An example of thisis a slot in a backplane that is provided for an add-on card.DIODE FORWARD CURRENTvsDIODE FORWARD VOLTAGE–100–90–80II– Forward Current – mA–70–60–50–40–30–20–10000.20.40.60.811.21.41.61.82VF – Forward Voltage – VVariable 1:VIN–Ch 1Linear Sweep:Start0.000 VStop–2.000 VStep–0.010 VConstants:VHI–Vs1VLO–Vs23.5000 V0.0000 VTA = 25°CFigure 1. Current Versus Voltage for the SN74F1056POST OFFICE BOX 655303 DALLAS, TEXAS 75265•3http://oneic.com/SDFS085A – AUGUST 1992 – REVISED JULY 1997SN74F10568-BIT SCHOTTKY BARRIER DIODEBUS-TERMINATION ARRAYAPPLICATION INFORMATIONZO = 50 ΩLength = 36 in. S1ZS = 25Ω(a) UNDERSHOOT TEST SETUP1.03610 µs1.06110 µs1.08610 µsS1 OpenS1 ClosedVmarker 1–2.6 VVmarker 2Ch 1TimebaseVmarker 1Vmarker 2= 2.000 V/div= 5.00 ns/div= 0.0000 V= –600.00 mV(b) OSCILLOSCOPE DISPLAYOffset= 2.340 VDelay= 1.06110 µsDelta V= –600.0 mVFigure 2. Undershoot Test Setup and Oscilloscope Display4POST OFFICE BOX 655303 DALLAS, TEXAS 75265•http://oneic.com/PACKAGEOPTIONADDENDUM

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23-Apr-2007

PACKAGINGINFORMATION

OrderableDeviceSN74F1056DSN74F1056DE4SN74F1056DG4SN74F1056DRSN74F1056DRE4SN74F1056DRG4

(1)

Status(1)ACTIVEACTIVEACTIVEACTIVEACTIVEACTIVE

PackageTypeSOICSOICSOICSOICSOICSOIC

PackageDrawing

DDDDDD

PinsPackageEcoPlan(2)

Qty161616161616

404040

Green(RoHS&noSb/Br)Green(RoHS&noSb/Br)Green(RoHS&noSb/Br)

Lead/BallFinishCUNIPDAUCUNIPDAUCUNIPDAUCUNIPDAUCUNIPDAUCUNIPDAU

MSLPeakTemp(3)Level-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIM

2500Green(RoHS&

noSb/Br)2500Green(RoHS&

noSb/Br)2500Green(RoHS&

noSb/Br)

Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.

LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.

NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.

PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable.OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.

(2)

EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.

Pb-Free(RoHS):TI'sterms\"Lead-Free\"or\"Pb-Free\"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.

Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.

Green(RoHS&noSb/Br):TIdefines\"Green\"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial)

(3)

MSL,PeakTemp.--TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.

ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.Effortsareunderwaytobetterintegrateinformationfromthirdparties.TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.

InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.

Addendum-Page1

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PACKAGEMATERIALSINFORMATION

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19-Mar-2008

TAPEANDREELINFORMATION

*Alldimensionsarenominal

Device

PackagePackagePinsTypeDrawingSOIC

D

16

SPQ

ReelReelDiameterWidth(mm)W1(mm)330.0

16.4

A0(mm)B0(mm)K0(mm)

P1(mm)8.0

WPin1(mm)Quadrant16.0

Q1

SN74F1056DR25006.510.32.1

PackMaterials-Page1

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PACKAGEMATERIALSINFORMATION

www.ti.com

19-Mar-2008

*Alldimensionsarenominal

DeviceSN74F1056DR

PackageType

SOIC

PackageDrawing

D

Pins16

SPQ2500

Length(mm)

333.2

Width(mm)345.9

Height(mm)

28.6

PackMaterials-Page2

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